64Mb Async/Page/Burst CellularRAM 1.5

Features ⚫ Single device supports asynchronous , page, and burst operation ⚫ Mixed Mode supports asynchronous write and synchronous read operation ⚫ Dual voltage rails for optional performance  ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ⚫ Asynchronous mode

文件：1.88959 Mbytes 页数：68 Pages

ISSI

矽成半导体

64Mb Async/Page/Burst CellularRAM 1.5

Features ⚫ Single device supports asynchronous , page, and burst operation ⚫ Mixed Mode supports asynchronous write and synchronous read operation ⚫ Dual voltage rails for optional performance  ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ⚫ Asynchronous mode

文件：1.88959 Mbytes 页数：68 Pages

ISSI

矽成半导体

Mixed Mode supports asynchronous write and synchronous read operation

文件：1.25347 Mbytes 页数：67 Pages

ISSI

矽成半导体

64Mb Async/Page/Burst CellularRAM 1.5

Features ⚫ Single device supports asynchronous , page, and burst operation ⚫ Mixed Mode supports asynchronous write and synchronous read operation ⚫ Dual voltage rails for optional performance  ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ⚫ Asynchronous mode

文件：1.88959 Mbytes 页数：68 Pages

ISSI

矽成半导体