64Mb Async/Page/Burst CellularRAM 1.5

Features ⚫ Single device supports asynchronous , page, and burst operation ⚫ Mixed Mode supports asynchronous write and synchronous read operation ⚫ Dual voltage rails for optional performance  ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ⚫ Asynchronous mode

文件：1.88959 Mbytes 页数：68 Pages

ISSI

矽成半导体

64Mb Async/Page/Burst CellularRAM 1.5

Features ⚫ Single device supports asynchronous , page, and burst operation ⚫ Mixed Mode supports asynchronous write and synchronous read operation ⚫ Dual voltage rails for optional performance  ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ⚫ Asynchronous mode

文件：1.88959 Mbytes 页数：68 Pages

ISSI

矽成半导体

CellularRAM/Pseudo SRAM

·8Mb,16Mb, 32Mb, and 64Mb densities available\n·Asynchronous, Page, and Burst features supported\n·Low Power Features\n·Industrial and Automotive (-40 to 85°C) Temperature available

ISSI

矽成半导体

动态随机存取存储器 Pseudo SRAM, 64Mb 4Mb x 16bits, ALL

ISSI

矽成半导体

包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC PSRAM 64MBIT PARALLEL 104MHZ

ISSI, Integrated Silicon Solution Inc

包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC PSRAM 64MBIT PARALLEL 104MHZ

ISSI, Integrated Silicon Solution Inc