IS64WV1288DBLL-10CTLA3中文资料矽成半导体数据手册PDF规格书

FEATURES

HIGH SPEED: (IS63/64WV1288DALL/DBLL)

• High-speed access time: 8, 10, 12, 20 ns

• Low Active Power: 135 mW (typical)

• Low Standby Power: 12 μW (typical)

CMOS standby

LOW POWER: (IS63/64WV1288DALS/DBLS)

• High-speed access time: 25, 35 ns

• Low Active Power: 55 mW (typical)

• Low Standby Power: 12 μW (typical)

CMOS standby

• Single power supply

— Vdd 1.65V to 2.2V (IS63WV1288DAxx)

— Vdd 2.4V to 3.6V (IS63/64WV1288DBxx)

• Multiple center power and ground pins for

greater noise immunity

• Easy memory expansion with CE and OE options

• CE power-down

• Fully static operation: no clock or refresh

required

• TTL compatible inputs and outputs

• Lead-free available