128K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS63/64WV1288DALL/DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 μW (typical) CMOS standby LOW POWER: (IS63/64WV1288DALS/DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low

文件：562.72 Kbytes 页数：19 Pages

ISSI

矽成半导体

Package：32-BSOJ（0.300"，7.62mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 32SOJ

ISSI, Integrated Silicon Solution Inc

Package：32-BSOJ（0.300"，7.62mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 32SOJ

ISSI, Integrated Silicon Solution Inc

128K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS63/64WV1288DALL/DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 μW (typical) CMOS standby LOW POWER: (IS63/64WV1288DALS/DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low

文件：562.72 Kbytes 页数：19 Pages

ISSI

矽成半导体