64Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV6416FALL) – 2.2V-3.6V VDD (IS62/65WV6416FBLL)  T

文件：594.82 Kbytes 页数：17 Pages

ISSI

矽成半导体

64Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV6416FALL) – 2.2V-3.6V VDD (IS62/65WV6416FBLL)  T

文件：594.82 Kbytes 页数：17 Pages

ISSI

矽成半导体

64Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV6416FALL) – 2.2V-3.6V VDD (IS62/65WV6416FBLL)  T

文件：594.82 Kbytes 页数：17 Pages

ISSI

矽成半导体

64Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV6416FALL) – 2.2V-3.6V VDD (IS62/65WV6416FBLL)  T

文件：594.82 Kbytes 页数：17 Pages

ISSI

矽成半导体