IS63LV1024-12T技术资料参数市场行情ISSI-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IS63LV1024-12T	文件：68.79 Kbytes Page：8 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：68.79 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS63LV1024-12T	文件：614.95 Kbytes Page：18 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 文件：614.95 Kbytes 页数：18 Pages	ISSI 矽成半导体	ISSI
IS63LV1024-12TI	文件：68.79 Kbytes Page：8 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：68.79 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS63LV1024-12TI	文件：614.95 Kbytes Page：18 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 文件：614.95 Kbytes 页数：18 Pages	ISSI 矽成半导体	ISSI

更多IS63LV1024-12T供应商更新时间2025-10-8 16:49:00