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IS62C1024-35Q

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

文件:67.88 Kbytes 页数:8 Pages

ISSI

矽成半导体

IS62C1024-35Q

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

文件:423.72 Kbytes 页数:8 Pages

ICSI

IS62C1024-35QI

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

文件:423.72 Kbytes 页数:8 Pages

ICSI

IS62C1024-35QI

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

文件:67.88 Kbytes 页数:8 Pages

ISSI

矽成半导体

IS62C1024-35Q

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION\nThe ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.\nWhen CE1 • High-speed access time: 35, 45, 55, 70 ns\n• Low active power: 450 mW (typical)\n• Low standby power: 500 µW (typical) CMOS standby\n• Output Enable (OE) and two Chip Enable\n   (CE1 and CE2) inputs for ease in applications\n• Fully static operation: no clock or refresh required\n• TTL compatible ;

ISSI

矽成半导体

详细参数

  • 型号:

    IS62C1024-35Q

  • 制造商:

    ICSI

  • 制造商全称:

    Integrated Circuit Solution Inc

  • 功能描述:

    128K x 8 HIGH-SPEED CMOS STATIC RAM

供应商型号品牌批号封装库存备注价格
ISSI
25+
QFN
18000
原厂直接发货进口原装
询价
ISSI有批量
23+
SOP-32
50000
全新原装正品现货,支持订货
询价
ISSI
21+
SOP32
10000
原装现货假一罚十
询价
ISSI
23+
SOP32
4807
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
ISSI
00+
SOP32
1006
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ISSI有批量
24+
NA/
520
优势代理渠道,原装正品,可全系列订货开增值税票
询价
ISSI
23+
SOP32
8000
专注配单,只做原装进口现货
询价
ISSI
23+24
SOP
9680
原盒原标.进口原装.支持实单 .价格优势
询价
ISSI
23+
SOP32
7000
询价
ISSI
24+
SOP32
5000
全新原装正品,现货销售
询价
更多IS62C1024-35Q供应商 更新时间2025-12-11 17:09:00