256Kx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

FEATURES  High-speed access time: 8, 10ns, 12ns  Low Active Current: 35mA (Max., 10ns, I-temp)  Low Standby Current: 10 mA (Max., I-temp)  Single power supply – 1.65V-2.2V VDD(IS61/64WV2568FALL) – 2.4V-3.6V VDD (IS61/64WV2568FBLL)  Three state outputs  Industrial and Automotive tempe

文件：892.16 Kbytes 页数：18 Pages

ISSI

矽成半导体

256Kx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

FEATURES  High-speed access time: 8, 10ns, 12ns  Low Active Current: 35mA (Max., 10ns, I-temp)  Low Standby Current: 10 mA (Max., I-temp)  Single power supply – 1.65V-2.2V VDD(IS61/64WV2568FALL) – 2.4V-3.6V VDD (IS61/64WV2568FBLL)  Three state outputs  Industrial and Automotive tempe

文件：892.16 Kbytes 页数：18 Pages

ISSI

矽成半导体

256Kx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

FEATURES  High-speed access time: 8, 10ns, 12ns  Low Active Current: 35mA (Max., 10ns, I-temp)  Low Standby Current: 10 mA (Max., I-temp)  Single power supply – 1.65V-2.2V VDD(IS61/64WV2568FALL) – 2.4V-3.6V VDD (IS61/64WV2568FBLL)  Three state outputs  Industrial and Automotive tempe

文件：892.16 Kbytes 页数：18 Pages

ISSI

矽成半导体

BGA48

ISSI

矽成半导体

上传：深圳市得捷芯城科技有限公司

TSSOP44

ISSI

矽成半导体

上传：深圳市富利微电子科技有限公司