首页 >IS61WV25616EFBLL>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IS61WV25616EFBLL | 256Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES • High-speed access time: 8, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV25616EFALL) – 2.4V-3.6V VDD (IS61/64WV25616EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indic 文件：584.81 Kbytes 页数：21 Pages | ISSI 矽成半导体 | ISSI | |
256Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES • High-speed access time: 8, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV25616EFALL) – 2.4V-3.6V VDD (IS61/64WV25616EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indic 文件：584.81 Kbytes 页数：21 Pages | ISSI 矽成半导体 | ISSI | ||
256Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES • High-speed access time: 8, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV25616EFALL) – 2.4V-3.6V VDD (IS61/64WV25616EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indic 文件：584.81 Kbytes 页数：21 Pages | ISSI 矽成半导体 | ISSI | ||
256Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES • High-speed access time: 8, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV25616EFALL) – 2.4V-3.6V VDD (IS61/64WV25616EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indic 文件：584.81 Kbytes 页数：21 Pages | ISSI 矽成半导体 | ISSI | ||
256Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES • High-speed access time: 8, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV25616EFALL) – 2.4V-3.6V VDD (IS61/64WV25616EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indic 文件：584.81 Kbytes 页数：21 Pages | ISSI 矽成半导体 | ISSI | ||
256Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES • High-speed access time: 8, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV25616EFALL) – 2.4V-3.6V VDD (IS61/64WV25616EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indic 文件：584.81 Kbytes 页数：21 Pages | ISSI 矽成半导体 | ISSI | ||
256Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES • High-speed access time: 8, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV25616EFALL) – 2.4V-3.6V VDD (IS61/64WV25616EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indic 文件：584.81 Kbytes 页数：21 Pages | ISSI 矽成半导体 | ISSI | ||
256Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES • High-speed access time: 8, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV25616EFALL) – 2.4V-3.6V VDD (IS61/64WV25616EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indic 文件：584.81 Kbytes 页数：21 Pages | ISSI 矽成半导体 | ISSI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
25+ |
BGA |
4500 |
ISSI存储芯片在售 |
询价 | ||
ISSI |
23+ |
TSOP44 |
4802 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
ISSI/芯成 |
22+ |
TSOP-44 |
18000 |
原装正品 |
询价 | ||
ISSI |
6 |
询价 | |||||
ISSI |
1813 |
con |
6 |
现货常备产品原装可到京北通宇商城查价格 |
询价 | ||
ISSI |
两年内 |
NA |
440 |
实单价格可谈 |
询价 | ||
ISSI/芯成 |
24+ |
mBGA48 |
34560 |
只做全新原装进口现货 |
询价 | ||
ISSI/芯成 |
24+ |
mBGA48 |
60000 |
全新原装现货 |
询价 | ||
ISSI/芯成 |
24+ |
TSOP |
8540 |
只做原装正品现货或订货假一赔十! |
询价 | ||
ISSI |
24+ |
n/a |
25836 |
新到现货,只做原装进口 |
询价 |
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