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IS61WV25616EFALL

256Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES • High-speed access time: 8, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV25616EFALL) – 2.4V-3.6V VDD (IS61/64WV25616EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indic

文件:584.81 Kbytes 页数:21 Pages

ISSI

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IS61WV25616EFALL-10B2LI

256Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES • High-speed access time: 8, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV25616EFALL) – 2.4V-3.6V VDD (IS61/64WV25616EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indic

文件:584.81 Kbytes 页数:21 Pages

ISSI

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IS61WV25616EFALL-10B3LI

256Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES • High-speed access time: 8, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV25616EFALL) – 2.4V-3.6V VDD (IS61/64WV25616EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indic

文件:584.81 Kbytes 页数:21 Pages

ISSI

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IS61WV25616EFALL-10B4LI

256Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES • High-speed access time: 8, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV25616EFALL) – 2.4V-3.6V VDD (IS61/64WV25616EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indic

文件:584.81 Kbytes 页数:21 Pages

ISSI

矽成半导体

IS61WV25616EFALL-10B5LI

256Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES • High-speed access time: 8, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV25616EFALL) – 2.4V-3.6V VDD (IS61/64WV25616EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indic

文件:584.81 Kbytes 页数:21 Pages

ISSI

矽成半导体

IS61WV25616EFALL-10BLI

256Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES • High-speed access time: 8, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV25616EFALL) – 2.4V-3.6V VDD (IS61/64WV25616EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indic

文件:584.81 Kbytes 页数:21 Pages

ISSI

矽成半导体

IS61WV25616EFALL-10T2LI

256Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES • High-speed access time: 8, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV25616EFALL) – 2.4V-3.6V VDD (IS61/64WV25616EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indic

文件:584.81 Kbytes 页数:21 Pages

ISSI

矽成半导体

IS61WV25616EFALL-10TLI

256Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES • High-speed access time: 8, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV25616EFALL) – 2.4V-3.6V VDD (IS61/64WV25616EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indic

文件:584.81 Kbytes 页数:21 Pages

ISSI

矽成半导体

供应商型号品牌批号封装库存备注价格
ISSI
25+
BGA
4500
ISSI存储芯片在售
询价
ISSI/芯成
22+
mBGA-48
18000
原装正品
询价
ISSI
6
询价
ISSI
1813
con
6
现货常备产品原装可到京北通宇商城查价格
询价
ISSI
24+
n/a
25836
新到现货,只做原装进口
询价
ISSI(美国芯成)
25+
TFBGA-48(6x8)
500000
源自原厂成本,高价回收工厂呆滞
询价
ISSI
两年内
NA
440
实单价格可谈
询价
ISSI/芯成
24+
mBGA48
34560
只做全新原装进口现货
询价
ISSI/芯成
24+
mBGA48
60000
全新原装现货
询价
ISSI/芯成
2450+
mBGA48
9850
只做原装正品现货或订货假一赔十!
询价
更多IS61WV25616EFALL供应商 更新时间2026-2-3 11:01:00