Asynchronous SRAM

·Broad Solution:- x8, x16, and x32 configurations available- 5V/3.3V/1.8V VDD Power Supply- Commercial, Industrial, and Automotive Temperature (-40 °C to 125 °C) support- BGA, SOJ, SOP, sTSOP, TSOP packages available\n·ECC feature available for High Speed Asynchronous SRAMs\n·Long-term support

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

文件：120.26 Kbytes 页数：5 Pages

ISSI

矽成半导体

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe

文件：272.47 Kbytes 页数：21 Pages

ISSI

矽成半导体

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件：201.17 Kbytes 页数：21 Pages

ISSI

矽成半导体