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IS61QDB41M36

36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 4) Synchronous SRAMs

文件:451.87 Kbytes 页数:28 Pages

ISSI

矽成半导体

IS61QDB41M36

QUAD SRAM

ISSI

矽成半导体

IS61QDB41M36A

2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM

FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo

文件:827.67 Kbytes 页数:30 Pages

ISSI

矽成半导体

IS61QDB41M36A -400M3L

2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM

FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo

文件:827.67 Kbytes 页数:30 Pages

ISSI

矽成半导体

IS61QDB41M36A-250B4

2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM

FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo

文件:827.67 Kbytes 页数:30 Pages

ISSI

矽成半导体

IS61QDB41M36A-250B4I

2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM

FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo

文件:827.67 Kbytes 页数:30 Pages

ISSI

矽成半导体

IS61QDB41M36A-250B4L

2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM

FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo

文件:827.67 Kbytes 页数:30 Pages

ISSI

矽成半导体

IS61QDB41M36A-250B4LI

2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM

FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo

文件:827.67 Kbytes 页数:30 Pages

ISSI

矽成半导体

IS61QDB41M36A-250M3

2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM

FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo

文件:827.67 Kbytes 页数:30 Pages

ISSI

矽成半导体

IS61QDB41M36A-250M3I

2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM

FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo

文件:827.67 Kbytes 页数:30 Pages

ISSI

矽成半导体

详细参数

  • 型号:

    IS61QDB41M36

  • 功能描述:

    静态随机存取存储器 36Mb 1Mbx36 QUAD Sync 静态随机存取存储器

  • RoHS:

  • 制造商:

    Cypress Semiconductor

  • 存储容量:

    16 Mbit

  • 组织:

    1 M x 16

  • 访问时间:

    55 ns

  • 电源电压-最大:

    3.6 V

  • 电源电压-最小:

    2.2 V

  • 最大工作电流:

    22 uA

  • 最大工作温度:

    + 85 C

  • 最小工作温度:

    - 40 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    TSOP-48

  • 封装:

    Tray

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原装现货假一罚十
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更多IS61QDB41M36供应商 更新时间2026-2-1 10:51:00