首页>IS61QDB21M36C>规格书详情
IS61QDB21M36C集成电路(IC)的存储器规格书PDF中文资料

| 厂商型号 |
IS61QDB21M36C |
| 参数属性 | IS61QDB21M36C 封装/外壳为165-LBGA;包装为托盘;类别为集成电路(IC)的存储器;产品描述:IC SRAM 36MBIT PARALLEL 165LFBGA |
| 功能描述 | 2Mx18, 1Mx36 36Mb QUAD (Burst 2) Synchronous SRAM |
| 封装外壳 | 165-LBGA |
| 文件大小 |
851.57 Kbytes |
| 页面数量 |
29 页 |
| 生产厂商 | ISSI |
| 中文名称 | 矽成半导体 |
| 网址 | |
| 数据手册 | |
| 更新时间 | 2025-12-16 14:33:00 |
| 人工找货 | IS61QDB21M36C价格和库存,欢迎联系客服免费人工找货 |
相关芯片规格书
更多- IS61QDB21M36A
- IS61QDB21M36-250M3L
- IS61QDB21M36-250M3
- IS61QDB21M18C-400M3LI
- IS61QDB21M18C-400M3L
- IS61QDB21M18C-400M3I
- IS61QDB21M18C-400M3
- IS61QDB21M18C-400B4LI
- IS61QDB21M18C-400B4L
- IS61QDB21M18C-400B4I
- IS61QDB21M18C-400B4
- IS61QDB21M18C-333M3LI
- IS61QDB21M18C-333M3L
- IS61QDB21M18C-333M3I
- IS61QDB21M18C-333M3
- IS61QDB21M18C-333B4LI
- IS61QDB21M18C-333B4L
- IS61QDB21M18C-333B4I
IS61QDB21M36C规格书详情
FEATURES
1Mx36 and 2Mx18 configuration available.
On-chip Delay-Locked Loop (DLL) for wide data valid window.
Separate independent read and write ports with concurrent read and write operations.
Synchronous pipeline read with EARLY write operation.
Double Data Rate (DDR) interface for read and write input ports.
Fixed 2-bit burst for read and write operations.
Clock stop support.
Two input clocks (K and K#) for address and control registering at rising edges only.
Two output clocks (C and C#) for data output control.
Two echo clocks (CQ and CQ#) that are delivered simultaneously with data.
+1.8V core power supply and 1.5, 1.8V VDDQ, used with 0.75, 0.9V VREF.
HSTL input and output interface.
Registered addresses, write and read controls, byte writes, data in, and data outputs.
Full data coherency.
Boundary scan using limited set of JTAG 1149.1 functions.
Byte write capability.
Fine ball grid array (FBGA) package:
13mmx15mm and 15mmx17mm body size
165-ball (11 x 15) array
Programmable impedance output drivers via 5x user-supplied precision resistor.
产品属性
- 产品编号:
IS61QDB21M36C-250M3L
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 类别:
集成电路(IC) > 存储器
- 包装:
托盘
- 存储器类型:
易失
- 存储器格式:
SRAM
- 技术:
SRAM - 同步,QUAD
- 存储容量:
36Mb(1M x 36)
- 存储器接口:
并联
- 电压 - 供电:
1.71V ~ 1.89V
- 工作温度:
0°C ~ 70°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
165-LBGA
- 供应商器件封装:
165-LFBGA(15x17)
- 描述:
IC SRAM 36MBIT PARALLEL 165LFBGA
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI Integrated Silicon Soluti |
22+ |
165LFBGA (15x17) |
9000 |
原厂渠道,现货配单 |
询价 | ||
INTEGRATSILICONS |
1923+ |
原厂封装 |
5689 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
ISSI |
23+ |
BGA |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ISSI |
23+ |
165-FBGA(15x17) |
9550 |
专业分销产品!原装正品!价格优势! |
询价 | ||
ISSI Integrated Silicon Solut |
25+ |
165-LBGA |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
ISSI |
25+ |
BGA |
4500 |
原装正品!公司现货!欢迎来电! |
询价 | ||
ISSI |
23+ |
BGA |
64764 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
ISSI |
20+ |
BGA |
230 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ISSI |
24+ |
BGA |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
ISSI |
24+ |
FBGA |
880000 |
明嘉莱只做原装正品现货 |
询价 |
相关库存
更多- IS61QDB21M18C-333B4
- IS61QDB21M18C-300M3LI
- IS61QDB21M18C-300M3L
- IS61QDB21M18C-300M3I
- IS61QDB21M18C-300M3
- IS61QDB21M18C-300B4LI
- IS61QDB21M18C-300B4L
- IS61QDB21M36C-250B4
- IS61QDB21M36C-250B4I
- IS61QDB21M36C-250B4L
- IS61QDB21M36C-250B4LI
- IS61QDB21M36C-250M3
- IS61QDB21M36C-250M3I
- IS61QDB21M36C-250M3L
- IS61QDB21M36C-250M3LI
- IS61QDB21M36C-300B4
- IS61QDB21M36C-300B4I
- IS61QDB21M36C-300B4L
- IS61QDB21M36C-300B4LI
- IS61QDB21M36C-300M3
- IS61QDB21M36C-300M3I
- IS61QDB21M36C-300M3L
- IS61QDB21M36C-300M3LI
- IS61QDB21M36C-333B4
- IS61QDB21M36C-333B4I
- IS61QDB21M36C-333B4L
- IS61QDB21M36C-333B4LI
- IS61QDB21M36C-333M3
- IS61QDB21M36C-333M3I
- IS61QDB21M36C-333M3L
- IS61QDB21M36C-333M3LI
- IS61QDB21M36C-400B4

