DESCRIPTION

The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 36mW (max.) with CMOS input levels.

The IS61LV2568L operates from a single 3.3V power supply and all inputs are TTL-compatible.

The IS61LV2568L is available in 36-pin 400-mil SOJ and 44-pin TSOP (Type II) packages.

FEATURES

• High-speed access time: 8, 10 ns

• Operating Current: 50mA (typ.)

• Standby Current: 700µA (typ.)

• Multiple center power and ground pins for greater noise immunity

• Easy memory expansion with CE and OE options

• CE power-down

• TTL compatible inputs and outputs

• Single 3.3V power supply

• Packages available:

– 36-pin 400-mil SOJ

– 44-pin TSOP (Type II)

• Lead-free available

IS61LV2568L-10T属于集成电路（IC） > 存储器。ISSI有限公司制造生产的IS61LV2568L-10T存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。