128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

文件：112.45 Kbytes 页数：16 Pages

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

文件：112.45 Kbytes 页数：16 Pages

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

文件：112.45 Kbytes 页数：16 Pages

ISSI

矽成半导体

静态随机存取存储器 2Mb 128Kx16 10ns Async 静态随机存取存储器 3.3v

ISSI

矽成半导体

静态随机存取存储器 2Mb 128Kx16 10ns Async 静态随机存取存储器 3.3v

ISSI

矽成半导体

静态随机存取存储器 2Mb 128Kx16 10ns Async 静态随机存取存储器 3.3v

ISSI

矽成半导体

Package：48-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 2MBIT PARALLEL 48MINIBGA

ISSI, Integrated Silicon Solution Inc

Package：48-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 2MBIT PARALLEL 48MINIBGA

ISSI, Integrated Silicon Solution Inc

Package：48-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 2MBIT PARALLEL 48MINIBGA

ISSI, Integrated Silicon Solution Inc