512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an

文件：2.03174 Mbytes 页数：35 Pages

ISSI

矽成半导体

512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an

文件：2.03174 Mbytes 页数：35 Pages

ISSI

矽成半导体

512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an

文件：2.03174 Mbytes 页数：35 Pages

ISSI

矽成半导体

512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an

文件：2.03174 Mbytes 页数：35 Pages

ISSI

矽成半导体

Package：165-TBGA；包装：散装 类别：集成电路（IC） 存储器 描述：IC SRAM 18MBIT PARALLEL 165TFBGA

ISSI, Integrated Silicon Solution Inc

Package：165-TBGA；包装：散装 类别：集成电路（IC） 存储器 描述：IC SRAM 18MBIT PARALLEL 165TFBGA

ISSI, Integrated Silicon Solution Inc