256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

文件：305.09 Kbytes 页数：35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

文件：276.75 Kbytes 页数：35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

文件：305.09 Kbytes 页数：35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

文件：276.75 Kbytes 页数：35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

文件：276.75 Kbytes 页数：35 Pages

ISSI

矽成半导体

Synchronous SRAM

·4Mb, 9Mb, 18Mb, 36Mb, and 72Mb densities available\n·x18, x36, and x72 configurations available\n·Pipeline, Flow-Through, and No-Wait State (ZBT equivalent)\n·Commercial, Industrial, and Automotive Temperature support\n·ECC feature available for 4Mb product\n·250MHz speed for Pipeline\n·6.5ns acces

ISSI

矽成半导体