128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

文件：102.48 Kbytes 页数：8 Pages

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

文件：102.48 Kbytes 页数：8 Pages

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

文件：102.48 Kbytes 页数：8 Pages

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

文件：102.48 Kbytes 页数：8 Pages

ISSI

矽成半导体