32 M b x9, 16 Mb x18, 8 Mbx36 Common I/O RLDRAM 2 Memory

FEATURES • 533MHz DDR operation (1.067 Gb/s/pin data rate) • 38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Reduced cycle time (15ns at 533MHz) • 32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms) • 8 internal banks • Non-multiplexed a

文件：1.215 Mbytes 页数：34 Pages

ISSI

矽成半导体

32 M b x9, 16 Mb x18, 8 Mbx36 Common I/O RLDRAM 2 Memory

FEATURES • 533MHz DDR operation (1.067 Gb/s/pin data rate) • 38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Reduced cycle time (15ns at 533MHz) • 32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms) • 8 internal banks • Non-multiplexed a

文件：1.215 Mbytes 页数：34 Pages

ISSI

矽成半导体

PLCC-28

ISSI

矽成半导体

上传：深圳市鸿昌盛电子科技有限公司

TSOP

ISSI

矽成半导体

上传：深圳市赛芯源科技有限公司

TSOPI-28

ISSI(美国芯成)

上传：深圳市宇创芯科技有限公司