32 M b x9, 16 Mb x18, 8 Mbx36 Common I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexed a

文件：1.215 Mbytes 页数：34 Pages

ISSI

矽成半导体

32 M b x9, 16 Mb x18, 8 Mbx36 Common I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexed a

文件：1.215 Mbytes 页数：34 Pages

ISSI

矽成半导体

32 M b x9, 16 Mb x18, 8 Mbx36 Common I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexed a

文件：1.215 Mbytes 页数：34 Pages

ISSI

矽成半导体

32 M b x9, 16 Mb x18, 8 Mbx36 Common I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexed a

文件：1.215 Mbytes 页数：34 Pages

ISSI

矽成半导体