512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture

文件：4.19807 Mbytes 页数：87 Pages

ISSI

矽成半导体

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture

文件：4.19807 Mbytes 页数：87 Pages

ISSI

矽成半导体

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture

文件：4.19807 Mbytes 页数：87 Pages

ISSI

矽成半导体

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture

文件：4.19807 Mbytes 页数：87 Pages

ISSI

矽成半导体

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture

文件：4.19807 Mbytes 页数：87 Pages

ISSI

矽成半导体

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture

文件：4.19807 Mbytes 页数：87 Pages

ISSI

矽成半导体

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture

文件：4.19807 Mbytes 页数：87 Pages

ISSI

矽成半导体

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture

文件：4.19807 Mbytes 页数：87 Pages

ISSI

矽成半导体

1.5V DDR3 SDRAM Automotive

·Bidirectional differential data strobe\n·Data masking per byte on Write commands\n·Programmable burst length of 4 or 8\n·Programmable CAS Latency\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Driver Adjustment)\n·ODT (On Die Termination) supported\n·Write Leveling\n·Long-term support

ISSI

矽成半导体

1.35V DDR3L SDRAM Automotive

·Bidirectional differential data strobe\n·Data masking per byte on Write commands\n·Programmable burst length of 4 or 8\n·Programmable CAS Latency\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Driver Adjustment)\n·ODT (On Die Termination) supported\n·Write Leveling\n·Long-term support\n

ISSI

矽成半导体