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IS46TR82560C

Programmable CAS Latency

文件:3.82435 Mbytes 页数:88 Pages

ISSI

矽成半导体

IS46TR82560C-125KBLA1

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

文件:3.49709 Mbytes 页数:87 Pages

ISSI

矽成半导体

IS46TR82560C-125KBLA2

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

文件:3.49709 Mbytes 页数:87 Pages

ISSI

矽成半导体

IS46TR82560C-15HBLA1

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

文件:3.49709 Mbytes 页数:87 Pages

ISSI

矽成半导体

IS46TR82560C-15HBLA2

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

文件:3.49709 Mbytes 页数:87 Pages

ISSI

矽成半导体

IS46TR82560CL-125KBLA1

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

文件:3.49709 Mbytes 页数:87 Pages

ISSI

矽成半导体

IS46TR82560CL-125KBLA2

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

文件:3.49709 Mbytes 页数:87 Pages

ISSI

矽成半导体

IS46TR82560CL-15HBLA1

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

文件:3.49709 Mbytes 页数:87 Pages

ISSI

矽成半导体

IS46TR82560CL-15HBLA2

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

文件:3.49709 Mbytes 页数:87 Pages

ISSI

矽成半导体

IS46TR82560CL

Programmable CAS Latency

文件:3.82435 Mbytes 页数:88 Pages

ISSI

矽成半导体

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更多IS46TR82560C供应商 更新时间2025-10-13 18:06:00