256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

文件：3.49709 Mbytes 页数：87 Pages

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

文件：4.53213 Mbytes 页数：87 Pages

ISSI

矽成半导体

DIP-2

SHARPSharp Corporation

夏普

上传：深圳市神舟芯电子科技有限公司

PLCC-28

ISSI

矽成半导体

上传：深圳市鸿昌盛电子科技有限公司

TSOP

ISSI

矽成半导体

上传：深圳市赛芯源科技有限公司