32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM

FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs

文件：859.42 Kbytes 页数：63 Pages

ISSI

矽成半导体

32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM

FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs

文件：859.42 Kbytes 页数：63 Pages

ISSI

矽成半导体

32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM

FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs

文件：859.42 Kbytes 页数：63 Pages

ISSI

矽成半导体

SDR SDRAM

·Synchronous, with 3.3V power supply\n·LVTTL interface\n·Programmable burst length (1, 2, 4, 8, full page)\n·Programmable burst sequence: Sequential/Interleave\n·Self refresh and Auto Refresh modes\n·Random column address every clock cycle\n·Programmable CAS latency (2, 3 clocks)\n·Burst read/write

ISSI

矽成半导体

Package：54-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PARALLEL 54TFBGA

ISSI, Integrated Silicon Solution Inc

Package：54-TSOP（0.400"，10.16mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PAR 54TSOP II

ISSI, Integrated Silicon Solution Inc

Package：54-TSOP（0.400"，10.16mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PAR 54TSOP II

ISSI, Integrated Silicon Solution Inc