IS45S16160G规格书批发采购矽成半导体ISSI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS45S16160G	文件：1.2488 Mbytes Page：63 Pages	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst 文件：1.2488 Mbytes 页数：63 Pages	ISSI 矽成半导体	ISSI
IS45S16160G	文件：942.97 Kbytes Page：63 Pages	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM 文件：942.97 Kbytes 页数：63 Pages	ISSI 矽成半导体	ISSI
IS45S16160G-6BLA1	文件：1.2488 Mbytes Page：63 Pages	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst 文件：1.2488 Mbytes 页数：63 Pages	ISSI 矽成半导体	ISSI
IS45S16160G-6BLA2	文件：1.2488 Mbytes Page：63 Pages	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst 文件：1.2488 Mbytes 页数：63 Pages	ISSI 矽成半导体	ISSI
IS45S16160G-6CTLA2	文件：1.2488 Mbytes Page：63 Pages	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst 文件：1.2488 Mbytes 页数：63 Pages	ISSI 矽成半导体	ISSI
IS45S16160G-6TLA1	文件：1.2488 Mbytes Page：63 Pages	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst 文件：1.2488 Mbytes 页数：63 Pages	ISSI 矽成半导体	ISSI
IS45S16160G-7BLA1	文件：1.2488 Mbytes Page：63 Pages	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst 文件：1.2488 Mbytes 页数：63 Pages	ISSI 矽成半导体	ISSI
IS45S16160G-7BLA2	文件：1.2488 Mbytes Page：63 Pages	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst 文件：1.2488 Mbytes 页数：63 Pages	ISSI 矽成半导体	ISSI
IS45S16160G-7CTLA1	文件：1.2488 Mbytes Page：63 Pages	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst 文件：1.2488 Mbytes 页数：63 Pages	ISSI 矽成半导体	ISSI
IS45S16160G-7CTLA2	文件：1.2488 Mbytes Page：63 Pages	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst 文件：1.2488 Mbytes 页数：63 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS45S16160G
功能描述：
动态随机存取存储器 Automotive 256M,3.3V S动态随机存取存储器,16Mx16,166MHz
RoHS：
否
制造商：
ISSI
数据总线宽度：
16 bit
组织：
1 M x 16
封装/箱体：
SOJ-42
存储容量：
16 MB
访问时间：
50 ns
电源电压-最大：
7 V
电源电压-最小：
- 1 V
最大工作电流：
90 mA
最大工作温度：
+ 85 C
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市粤科源兴科技有限公司	IS45S16160G-7BLA1	ISSI	1147+	BGA	1		询价
深圳市卓越微芯电子有限公司	IS45S16160G-7CTLA1	ISSI	25+	TSOP	2670	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市昊创电子有限公司	IS45S16160G-7CTLA1	ISSI	专业铁帽	TSOP	171	原装铁帽专营,代理渠道量大可订货	询价
中天科工半导体（深圳）有限公司	IS45S16160G-7CTLA1	ISSI	20+	TSOP	67500	原装优势主营型号-可开原型号增税票	询价
深圳市斌腾达科技有限公司	IS45S16160G-7BLA2	ISSI, Integrated Silicon Solut	21+	119-BGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
深圳市拓亿芯电子有限公司	IS45S16160G-7BLA1-TR	ISSI	25+	BGA	30000	代理原装现货,价格优势	询价
瀚佳科技(深圳)有限公司	IS45S16160G-7CTLA2	ISSI, Integrated Silicon Solut	24+	54-TSOP II	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	IS45S16160G-7TLA2-TR	ISSI	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	IS45S16160G-7BLA1	NULL	2447	BGA	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市科雨电子有限公司	IS45S16160G-7TLA1-TR	ISSI	25+	TSOP-54	1500	就找我吧!--邀您体验愉快问购元件!	询价

更多IS45S16160G供应商更新时间2026-2-7 9:01:00

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