128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

文件：3.72403 Mbytes 页数：75 Pages

ISSI

矽成半导体

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

文件：3.72403 Mbytes 页数：75 Pages

ISSI

矽成半导体

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

文件：3.72403 Mbytes 页数：75 Pages

ISSI

矽成半导体

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

文件：3.3993 Mbytes 页数：74 Pages

ISSI

矽成半导体

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

文件：3.3993 Mbytes 页数：74 Pages

ISSI

矽成半导体

DDR3 SDRAM w/ ECC

·Bidirectional differential data strobe\n·Internal Error Correcting Code (ECC) to prevent bit errors\n·Programmable CAS Latency\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Driver Adjustment)\n·ODT (On Die Termination) supported\n·Write Leveling\n·Long-term support

ISSI

矽成半导体