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IS43TR16640A集成电路(IC)存储器规格书PDF中文资料
厂商型号 |
IS43TR16640A |
参数属性 | IS43TR16640A 封装/外壳为96-TFBGA;包装为托盘;类别为集成电路(IC) > 存储器;产品描述:IC DRAM 1GBIT PARALLEL 96TWBGA |
功能描述 | 128MX8, 64MX16 1Gb DDR3 SDRAM |
文件大小 |
2.23423 Mbytes |
页面数量 |
71 页 |
生产厂商 | Integrated Silicon Solution Inc |
企业简称 |
ISSI【ISSI公司】 |
中文名称 | ISSI有限公司官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-5-31 14:22:00 |
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IS43TR16640A规格书详情
FEATURES
● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
● High speed data transfer rates with system
frequency up to 933 MHz
● 8 internal banks for concurrent operation
● 8Bits pre-fetch architecture
● Programmable CAS Latency: 5, 6, 7, 8, 9, 10 and 11
● Programmable Additive Latency: 0, CL-1,CL-2
● Programmable CAS WRITE latency (CWL) based
on tCK
● Programmable Burst Length: 4 and 8
● Programmable Burst Sequence: Sequential or
Interleave
● BL switch on the fly
● Auto Self Refresh(ASR)
● Self Refresh Temperature(SRT)
● Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
● Partial Array Self Refresh
● Asynchronous RESET pin
● TDQS (Termination Data Strobe) supported (x8 only)
● OCD (Off-Chip Driver Impedance Adjustment)
● Dynamic ODT (On-Die Termination)
● Driver strength : RZQ/7, RZQ/6 (RZQ = 240 )
● Write Leveling
● Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)
IS43TR16640A属于集成电路(IC) > 存储器。ISSI有限公司制造生产的IS43TR16640A存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。
产品属性
- 产品编号:
IS43TR16640A-125JBLI
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 类别:
集成电路(IC) > 存储器
- 包装:
托盘
- 存储器类型:
易失
- 存储器格式:
DRAM
- 技术:
SDRAM - DDR3
- 存储容量:
1Gb(64M x 16)
- 存储器接口:
并联
- 写周期时间 - 字,页:
15ns
- 电压 - 供电:
1.425V ~ 1.575V
- 工作温度:
-40°C ~ 95°C(TC)
- 安装类型:
表面贴装型
- 封装/外壳:
96-TFBGA
- 供应商器件封装:
96-TWBGA(9x13)
- 描述:
IC DRAM 1GBIT PARALLEL 96TWBGA
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ISSI |
1802+ |
BGA |
3560 |
只做原装!天天特价!欢迎随时咨询! |
询价 | ||
ISSI |
21+ |
FBGA |
10000 |
原装现货假一罚十 |
询价 | ||
ISSI |
23+ |
BGA96 |
20000 |
原装正品 欢迎咨询 |
询价 | ||
ISSI |
23+ |
NA/ |
6685 |
原装现货,当天可交货,原型号开票 |
询价 | ||
ISSI |
23+ |
FBGA96 |
10800 |
专营ISSI进口原装正品现货假一赔十可开增票 |
询价 | ||
ISSI |
22+ |
BGA |
360000 |
进口原装房间现货实库实数 |
询价 | ||
ISSI |
21+ |
BGA96 |
1975 |
询价 | |||
ISSI |
21+ |
BGA96 |
5000 |
原装现货/假一赔十/支持第三方检验 |
询价 | ||
ISSI/芯成 |
22+ |
BGA96 |
18000 |
原装正品 |
询价 | ||
ISSI-矽成 |
24+25+/26+27+ |
BGA-96 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |