1Gx8, 512Mx16 8Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 933 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture •

文件：3.82264 Mbytes 页数：87 Pages

ISSI

矽成半导体

1Gx8, 512Mx16 8Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 933 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture •

文件：3.82264 Mbytes 页数：87 Pages

ISSI

矽成半导体

TSOP54

ISSI

矽成半导体

上传：深圳市富源半导体有限公司

TSOP54

ISSI

矽成半导体

上传：深圳市鼎欣微电子有限公司

TSOP86

ISSI

矽成半导体

上传：深圳市粤骏腾电子科技有限公司