1M x 16Bits x 4Banks Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK,

文件：1.77736 Mbytes 页数：42 Pages

ISSI

矽成半导体

Four internal banks for concurrent operation

文件：1.85854 Mbytes 页数：43 Pages

ISSI

矽成半导体

1M x 16Bits x 4Banks Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK,

文件：1.77736 Mbytes 页数：42 Pages

ISSI

矽成半导体

1M x 16Bits x 4Banks Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK,

文件：1.77736 Mbytes 页数：42 Pages

ISSI

矽成半导体

1M x 16Bits x 4Banks Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK,

文件：1.77736 Mbytes 页数：42 Pages

ISSI

矽成半导体

Mobile DDR SDRAM

·Double-data rate\n·Four internal banks with bank controls\n·Programmable Burst Length and CAS Latency\n·Power Savings with:- Partial Array Self Refresh (PASR)- Temperature Compenstate Self Refresh- Selectable Output Driver Strength- Deep Power Down\n·Long term support\n • JEDEC standard 1.8V power supply.\n• Four internal banks for concurrent operation\n• CAS latency 2, 3(clock)\n• Burst type(sequential & interleave)\n• Burst length(2, 4, 8, 16)\n• Fully differential clock inputs(CK, /CK)\n• Data I/O transaction on both edges of data strobe\n• DM for write masking ;

ISSI

矽成半导体

动态随机存取存储器 64M, 1.8V, M-DDR 4Mx16, 166Mhz, RoHS

ISSI

矽成半导体

Package：60-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 64MBIT PARALLEL 60TFBGA

ISSI, Integrated Silicon Solution Inc

Package：60-TFBGA；包装：管件 类别：集成电路（IC） 存储器 描述：IC DRAM 64MBIT PARALLEL 60TFBGA

ISSI, Integrated Silicon Solution Inc