256Mb (x16, x32) Mobile LPDDR2 S4 SDRAM

FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O Interface • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O) • Four-bit Pre-fetch DDR Archite

文件：4.21183 Mbytes 页数：144 Pages

ISSI

矽成半导体

256Mb (x16, x32) Mobile LPDDR2 S4 SDRAM

FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O Interface • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O) • Four-bit Pre-fetch DDR Archite

文件：4.21183 Mbytes 页数：144 Pages

ISSI

矽成半导体

256Mb (x16, x32) Mobile LPDDR2 S4 SDRAM

FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O Interface • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O) • Four-bit Pre-fetch DDR Archite

文件：4.21183 Mbytes 页数：144 Pages

ISSI

矽成半导体

256Mb (x16, x32) Mobile LPDDR2 S4 SDRAM

FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O Interface • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O) • Four-bit Pre-fetch DDR Archite

文件：4.21183 Mbytes 页数：144 Pages

ISSI

矽成半导体

256Mb (x16, x32) Mobile LPDDR2 S4 SDRAM

FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O Interface • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O) • Four-bit Pre-fetch DDR Archite

文件：4.21183 Mbytes 页数：144 Pages

ISSI

矽成半导体

256Mb (x16, x32) Mobile LPDDR2 S4 SDRAM

FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O Interface • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O) • Four-bit Pre-fetch DDR Archite

文件：4.21183 Mbytes 页数：144 Pages

ISSI

矽成半导体

256Mb (x16, x32) Mobile LPDDR2 S4 SDRAM

FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O Interface • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O) • Four-bit Pre-fetch DDR Archite

文件：4.21183 Mbytes 页数：144 Pages

ISSI

矽成半导体

动态随机存取存储器 256M, 1.2/1.8V, LPDDR2, 16Mx16, 400MHz, 134 ball BGA (10mmx11.5mm) RoHS, IT

ISSI

矽成半导体

Package：134-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PAR 134TFBGA

ISSI, Integrated Silicon Solution Inc