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IS43DR16640B-25DBI

1Gb(x8,x16)DDR2SDRAM

FEATURES Clockfrequencyupto400MHz 8internalbanksforconcurrentoperation 4‐bitprefetcharchitecture ProgrammableCASLatency:3,4,5,6and7 ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 WriteLatency=ReadLatency‐1 ProgrammableBurstSequence:Sequential

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS43DR16640B-25DBL

1Gb(x8,x16)DDR2SDRAM

FEATURES Clockfrequencyupto400MHz 8internalbanksforconcurrentoperation 4‐bitprefetcharchitecture ProgrammableCASLatency:3,4,5,6and7 ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 WriteLatency=ReadLatency‐1 ProgrammableBurstSequence:Sequential

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS43DR16640B-25DBLI

1Gb(x8,x16)DDR2SDRAM

FEATURES Clockfrequencyupto400MHz 8internalbanksforconcurrentoperation 4‐bitprefetcharchitecture ProgrammableCASLatency:3,4,5,6and7 ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 WriteLatency=ReadLatency‐1 ProgrammableBurstSequence:Sequential

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS43DR16640B-25EBL

1Gb(x8,x16)DDR2SDRAM

FEATURES Clockfrequencyupto400MHz 8internalbanksforconcurrentoperation 4‐bitprefetcharchitecture ProgrammableCASLatency:3,4,5,6and7 ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 WriteLatency=ReadLatency‐1 ProgrammableBurstSequence:Sequential

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS43DR16640B-25EBLI

1Gb(x8,x16)DDR2SDRAM

FEATURES Clockfrequencyupto400MHz 8internalbanksforconcurrentoperation 4‐bitprefetcharchitecture ProgrammableCASLatency:3,4,5,6and7 ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 WriteLatency=ReadLatency‐1 ProgrammableBurstSequence:Sequential

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

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