首页 >IS43DR16640B-25DBLT>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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1Gb(x8,x16)DDR2SDRAM FEATURES Clockfrequencyupto400MHz 8internalbanksforconcurrentoperation 4‐bitprefetcharchitecture ProgrammableCASLatency:3,4,5,6and7 ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 WriteLatency=ReadLatency‐1 ProgrammableBurstSequence:Sequential | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI | ||
1Gb(x8,x16)DDR2SDRAM FEATURES Clockfrequencyupto400MHz 8internalbanksforconcurrentoperation 4‐bitprefetcharchitecture ProgrammableCASLatency:3,4,5,6and7 ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 WriteLatency=ReadLatency‐1 ProgrammableBurstSequence:Sequential | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI | ||
1Gb(x8,x16)DDR2SDRAM FEATURES Clockfrequencyupto400MHz 8internalbanksforconcurrentoperation 4‐bitprefetcharchitecture ProgrammableCASLatency:3,4,5,6and7 ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 WriteLatency=ReadLatency‐1 ProgrammableBurstSequence:Sequential | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI | ||
1Gb(x8,x16)DDR2SDRAM FEATURES Clockfrequencyupto400MHz 8internalbanksforconcurrentoperation 4‐bitprefetcharchitecture ProgrammableCASLatency:3,4,5,6and7 ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 WriteLatency=ReadLatency‐1 ProgrammableBurstSequence:Sequential | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI | ||
1Gb(x8,x16)DDR2SDRAM FEATURES Clockfrequencyupto400MHz 8internalbanksforconcurrentoperation 4‐bitprefetcharchitecture ProgrammableCASLatency:3,4,5,6and7 ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 WriteLatency=ReadLatency‐1 ProgrammableBurstSequence:Sequential | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI |
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