512Mb (x8, x16) DDR2 SDRAM

文件：729.31 Kbytes 页数：30 Pages

ISSI

矽成半导体

512Mb (x8, x16) DDR2 SDRAM

文件：729.31 Kbytes 页数：30 Pages

ISSI

矽成半导体

512Mb (x8, x16) DDR2 SDRAM

文件：729.31 Kbytes 页数：30 Pages

ISSI

矽成半导体

512Mb (x8, x16) DDR2 SDRAM

文件：729.31 Kbytes 页数：30 Pages

ISSI

矽成半导体

512Mb (x8, x16) DDR2 SDRAM

文件：729.31 Kbytes 页数：30 Pages

ISSI

矽成半导体

64Mx8, 32Mx16 DDR2 DRAM

文件：1.58779 Mbytes 页数：48 Pages

ISSI

矽成半导体

Differential data strobe

文件：1.65495 Mbytes 页数：48 Pages

ISSI

矽成半导体

1.8V DDR2 SDRAM

·Single supply voltage of 1.8V ± 0.1V\n·SSTL_18 compatible inputs\n·Data masking per byte on Write commands\n·Programmable burst length of 4 or 8\n·Programmable CAS Latency of 3, 4, 5 or 6\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Off-Chip Driver Impedance Adjustment)\n·ODT (On Die Termination) s

ISSI

矽成半导体

1.8V DDR2 SDRAM

·Single supply voltage of 1.8V ± 0.1V\n·SSTL_18 compatible inputs\n·Data masking per byte on Write commands\n·Programmable burst length of 4 or 8\n·Programmable CAS Latency of 3, 4, 5 or 6\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Off-Chip Driver Impedance Adjustment)\n·ODT (On Die Termination) s

ISSI

矽成半导体

1.8V DDR2 SDRAM

·Single supply voltage of 1.8V ± 0.1V\n·SSTL_18 compatible inputs\n·Data masking per byte on Write commands\n·Programmable burst length of 4 or 8\n·Programmable CAS Latency of 3, 4, 5 or 6\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Off-Chip Driver Impedance Adjustment)\n·ODT (On Die Termination) s

ISSI

矽成半导体