512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：608.22 Kbytes 页数：59 Pages

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW\nISSI's 64Mb Synchronous DRAM IS42S32200C1 is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.FEATURES\n• Cloc • Clock frequency: 183, 166, 143 MHz\n• Fully synchronous; all signals referenced to a positive clock edge\n• Internal bank for hiding row access/precharge\n• Single 3.3V power supply\n• LVTTL interface\n• Programmable burst length: (1, 2, 4, 8, full page)\n• Programmable burst sequence: Sequential/;

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：608.22 Kbytes 页数：59 Pages

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：608.22 Kbytes 页数：59 Pages

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：608.22 Kbytes 页数：59 Pages

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：608.22 Kbytes 页数：59 Pages

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：608.22 Kbytes 页数：59 Pages

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：608.22 Kbytes 页数：59 Pages

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：608.22 Kbytes 页数：59 Pages

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：608.22 Kbytes 页数：59 Pages

ISSI

矽成半导体