首页 >IS42S32200B-7T其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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512KBitsx32Bitsx4Banks(64-MBIT)SYNCHRONOUSDYNAMICRAM GENERALDESCRIPTION The64MbSDRAMisahighspeedCMOS,dynamicrandom-accessmemorydesignedtooperatein3.3Vmemorysystemscontaining67,108,864bits.Internallyconfiguredasaquad-bankDRAMwithasynchronousinterface.Each16,777,216-bitbankisorganizedas2,048rowsby256columns | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI | ||
512KBitsx32Bitsx4Banks(64-MBIT)SYNCHRONOUSDYNAMICRAM GENERALDESCRIPTION The64MbSDRAMisahighspeedCMOS,dynamicrandom-accessmemorydesignedtooperatein3.3Vmemorysystemscontaining67,108,864bits.Internallyconfiguredasaquad-bankDRAMwithasynchronousinterface.Each16,777,216-bitbankisorganizedas2,048rowsby256columns | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI | ||
512KBitsx32Bitsx4Banks(64-MBIT)SYNCHRONOUSDYNAMICRAM GENERALDESCRIPTION The64MbSDRAMisahighspeedCMOS,dynamicrandom-accessmemorydesignedtooperatein3.3Vmemorysystemscontaining67,108,864bits.Internallyconfiguredasaquad-bankDRAMwithasynchronousinterface.Each16,777,216-bitbankisorganizedas2,048rowsby256columns | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI | ||
512KBitsx32Bitsx4Banks(64-MBIT)SYNCHRONOUSDYNAMICRAM GENERALDESCRIPTION The64MbSDRAMisahighspeedCMOS,dynamicrandom-accessmemorydesignedtooperatein3.3Vmemorysystemscontaining67,108,864bits.Internallyconfiguredasaquad-bankDRAMwithasynchronousinterface.Each16,777,216-bitbankisorganizedas2,048rowsby256columns | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI |
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