8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件：962.56 Kbytes 页数：63 Pages

ISSI

矽成半导体

8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件：962.56 Kbytes 页数：63 Pages

ISSI

矽成半导体

8Meg x 16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW\nISSI's 128Mb Synchronous DRAM  achieves high-speed data transfer using pipeline architecture. All inputs and\noutputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows.FEATURES\n• Clock frequency: 143 MHz\n• Fully synchronous; all signals reference • Clock frequency: 143 MHz\n• Fully synchronous; all signals referenced to a positive clock edge\n• Internal bank for hiding row access/precharge\n• Power supply VDD VDDQ\n  IS42S16800A1 3.3V 3.3V\n• LVTTL interface\n• Programmable burst length – (1, 2, 4, 8, full page)\n• Programmable burst sequenc;

ISSI

矽成半导体

TSOP

ISSI

矽成半导体

上传：深圳市勤思达科技有限公司

TSSOP-54

ISSI

矽成半导体

上传：深圳市宇创芯科技有限公司