IS41LV16256B-60T中文资料矽成半导体数据手册PDF规格书

DESCRIPTION

The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV16256B ideal for use in 16 and 32-bit wide data bus systems.

FEATURES

• TTL compatible inputs and outputs

• Refresh Interval: 512 cycles/8 ms

• Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden

• JEDEC standard pinout

• Single power supply: 3.3V ± 10

• Byte Write and Byte Read operation via two CAS

• Lead-free available