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型号	下载订购	功能描述	制造商上传企业	LOGO
IS41LV16100A	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 页数：22 Pages	ISSI 矽成半导体	ISSI
IS41LV16100A-50K	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 页数：22 Pages	ISSI 矽成半导体	ISSI
IS41LV16100A-50KI	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 页数：22 Pages	ISSI 矽成半导体	ISSI
IS41LV16100A-50KL	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 页数：22 Pages	ISSI 矽成半导体	ISSI
IS41LV16100A-50KLI	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 页数：22 Pages	ISSI 矽成半导体	ISSI
IS41LV16100A-50T	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 页数：22 Pages	ISSI 矽成半导体	ISSI
IS41LV16100A-50TI	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 页数：22 Pages	ISSI 矽成半导体	ISSI
IS41LV16100A-50TL	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 页数：22 Pages	ISSI 矽成半导体	ISSI
IS41LV16100A-50TLI	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 页数：22 Pages	ISSI 矽成半导体	ISSI
IS41LV16100A-60K	文件：144.31 Kbytes Page：22 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word 文件：144.31 Kbytes 页数：22 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS41LV16100A
制造商：
ISSI
制造商全称：
Integrated Silicon Solution, Inc
功能描述：
1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	IS41LV16100A-50T	INTEGRATEDSI	05+	原厂原装	13216	只做全新原装真实现货供应	询价
谛辉(北京/上海/青岛 )电子科技有限公司	IS41LV16100A50T	ISS	25+	QFN	18000	原厂直接发货进口原装	询价
深圳市恒创达实业有限公司	IS41LV16100A-50TI	ISSI	17+	TSOP-44	6200	100%原装正品现货	询价
齐创科技(上海,北京,青岛)有限公司	IS41LV16100A50T	ISS	23+	TSOP	5000	原装正品,假一罚十	询价
上海专毅电子科技有限公司	IS41LV16100A50T	ISSI	17+	TSSOP-44	9888	只做原装,现货库存	询价
上海意淼电子科技有限公司	IS41LV16100A50T	ISSI	23+	TSSOP-44	12000	全新原装假一赔十	询价
上海金庆电子技术有限公司	IS41LV16100A-50KI	ISSI	新		99	全新原装货期两周	询价
深圳市华来深电子有限公司	IS41LV16100A-50T	ISSI	23+	TSOP44	8650	受权代理!全新原装现货特价热卖!	询价
深圳市华斯顿科技有限公司	IS41LV16100A-50TI	原装	25+23+	TSOP-44	13998	绝对原装正品全新进口深圳现货	询价
瀚佳科技(深圳)有限公司	IS41LV16100A-50T	ISSI	24+	SMD	35200	一级代理分销/放心采购	询价

更多IS41LV16100A供应商更新时间2025-10-10 15:32:00

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