4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

文件：158.88 Kbytes 页数：19 Pages

ISSI

矽成半导体

4Mx4 bit Dynamic RAM with EDO Page Mode

DESCRIPTION The ICSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

文件：236.69 Kbytes 页数：20 Pages

ICSI

ISSI
TSOP

ISSI

矽成半导体

上传：深圳市勤思达科技有限公司

ISSI
TSOP54

ISSI

矽成半导体

上传：深圳市凌旭科技有限公司

ISSI
TSOP54

ISSI

矽成半导体

上传：深圳市宏捷佳电子科技有限公司