IS41C16100中文资料1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE数据手册ISSI规格书

描述 Description

DESCRIPTION
The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.
The Byte Write control, of upper and lower byte, makes the IS41C16100 ideal for use in 16-bit and 32-bit wide data bus systems.FEATURES
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
— Auto refresh Mode: 1,024 cycles /16 ms
— RAS-Only, CAS-before-RAS (CBR), and Hidden
— Self refresh Mode - 1,024 cycles / 128ms
• JEDEC standard pinout
• Single power supply:
— 5V ± 10% (IS41C16100)
— 3.3V ± 10% (IS41LV16100)
• Byte Write and Byte Read operation via two CAS
• Industrail Temperature Range -40oC to 85oC
• Lead-free available

特性 Features

• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
— Auto refresh Mode: 1,024 cycles /16 ms
— RAS-Only, CAS-before-RAS (CBR), and Hidden
— Self refresh Mode - 1,024 cycles / 128ms
• JEDEC standard pinout
• Single power supply:
— 5V ± 10% (IS41C16100)
— 3.3V ± 10% (IS41LV16100)
• Byte Write and Byte Read operation via two CAS
• Industrail Temperature Range -40oC to 85oC
• Lead-free available