IS35MW04G164-TLA2中文资料矽成半导体数据手册PDF规格书

FEATURES

 Flexible & Efficient Memory

Architecture

- Memory Cell: 1bit/Memory Cell

- Organization: 512Mb x8 /256Mb x16

- X8:

- Memory Cell Array: (512M + 16M) x 8bit

- Data Register: (2K + 64) x 8bit

- Page Size: (2K + 64) Byte

- Block Erase: (128K + 4K) Byte

- X16:

- - Memory Cell Array: (256M + 8M) x 16bit

- - Data Register: (1K + 32) x 16bit

- - Page Size: (1K + 32) Byte

- - Block Erase: (64K + 2K) Byte

 Highest performance

- Read Performance

- Random Read: 25us (Max.)

- Serial Access: 45ns (Max.)

- Write Performance

- Program time: 300us - typical

- Block Erase time: 3ms – typical

 Low Power with Wide Temp. Ranges

- Single 1.8V (1.7V to 1.95V) Voltage

Supply

- 15 mA Active Read Current

- 10 μA Standby Current

- T emp Grades:

- Industrial: -40°C to +85°C

- Extended: -40°C to +105°C (1)

- Automotive, A1: -40°C to +85°C

- Automotive, A2: -40°C to +105°C (1)

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 Reliable CMOS Floating Gate

Technology

- ECC Requirement: X8 - 4bit/512Byte

X16 - 4bit/256Word

- Endurance: 100K Program/Erase cycles

- Data Retention: 10 years

 Efficient Read and Program modes

- Command/Address/Data Multiplexed I/O

Interface

- Command Register Operation

- Automatic Page 0 Read at Power-Up Option

- Boot from NAND support

- Automatic Memory Download

- NOP: 4 cycles

- Cache Program Operation for High

Performance Program

- Cache Read Operation

- Copy-Back Operation

- EDO mode

- OTP operation

- Two-Plane Operation

- Bad-Block-Protect

 Advanced Security Protection

- Hardware Data Protection:

- Program/Erase Lockout during Power

Transitions

 Industry Standard Pin-out & Packages

- T =48-pin TSOP 1