IS35ML04G084-TLE中文资料矽成半导体数据手册PDF规格书

FEATURES

 Flexible & Efficient Memory

Architecture

- Organization: 512Mb x8

- Memory Cell Array: (512M + 16M) x 8bit

- Data Register: (2K + 64) x 8bit

- Page Size: (2K + 64) Byte

- Block Erase: (128K + 4K) Byte

- Memory Cell: 1bit/Memory Cell

 Highest performance

- Read Performance

- Random Read: 25us (Max.)

- Serial Access: 25ns (Max.)

- Write Performance

- Program time: 300us - typical

- Block Erase time: 3ms – typical

 Low Power with Wide Temp. Ranges

- Single 3.3V (2.7V to 3.6V) Voltage

Supply

- 10 mA Active Read Current

- 8 μA Standby Current

- Temp Grades:

- Industrial: -40°C to +85°C

- Extended: -40°C to +105°C

- Automotive, A1: -40°C to +85°C

- Automotive, A2: -40°C to +105°C

 Reliable CMOS Floating Gate

Technology

- ECC Requirement: X8 - 4bit/512Byte

- Endurance: 100K Program/Erase cycles

- Data Retention: 10 years

 Efficient Read and Program modes

- Command/Address/Data Multiplexed I/O

Interface

- Command Register Operation

- Automatic Page 0 Read at Power-Up Option

- Boot from NAND support

- Automatic Memory Download

- NOP: 4 cycles

- Cache Program Operation for High

Performance Program

- Cache Read Operation

- Copy-Back Operation

- EDO mode

- Two-Plane Operation

- Bad-Block-Protect

 Advanced Security Protection

- Hardware Data Protection

- Program/Erase Lockout during Power

Transitions

 Industry Standard Pin-out & Packages

- T =48-pin TSOP 1