IS-2100ARH数据手册Renesas中文资料规格书

描述 Description

The radiation hardened IS-2100ARH, IS-2100AEH are high frequency, 130V half bridge N-Channel MOSFET driver ICs, which are functionally similar to industry standard 2110 types. The low-side and high-side gate drivers are independently controlled. This gives the user maximum flexibility in dead time selection and driver protocol.
In addition, the devices have on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from single event upsets (SEUs).

特性 Features

• Electrically screened to DLA SMD # 5962-99536
• QML qualified per MIL-PRF-38535 requirements
• Radiation environment
• Maximum total dose: 300krad(Si)
• DI RSG process provides latch-up immunity
• SEU rating: 82MeV/mg/cm2
• Vertical device architecture reduces sensitivity to low dose rates
• Bootstrap supply maximum voltage to 150V
• Drives 1000pF load at 1MHz with rise and fall times of 30ns (typical)
• 1.5A (typical) peak output current
• Independent inputs for non-half bridge topologies
• Low DC power consumption: 60mW (typical)
• Operates with VDD = VCC over 12V to 20V range
• Low-side supply undervoltage protection

应用 Application

• High frequency switch-mode power supplies
• Drivers for inductive loads
• DC motor drivers