IS-1845ASEH中文资料Single Event Radiation Hardened High Speed, Current Mode PWM数据手册Renesas规格书

描述 Description

The IS-1845ASRH, IS-1845ASEH are designed to be used in switching power supplies operating in current-mode. The rising edge of the on-chip oscillator turns on the output. Turn-off is controlled by the current sense comparator and occurs when the sensed current reaches a peak controlled by the error amplifier.
Constructed with Intersil’s Rad Hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide a high level of immunity to single event transients. All specified parameters are guaranteed and tested for 300krad(Si) total dose performance at a high dose rate and 50krad(Si) total dose at a low dose rate.
Detailed Electrical Specifications for these devices are contained in the SMD 5962-01509.

特性 Features

•\"
• Electrically Screened to DSCC SMD# 5962-01509
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
• High Dose Rate: 300 krad(SI) (Max)
• Low Dose Rate: 50 krad(SI) (Max)
• SEL Immune: Dielectrically Isolated
• SEU Immune: 35MeV/mg/cm2
• SEU Cross-Section at 89MeV/mg/cm2: 5 x 10-6cm2
• Low Start-up Current: 100µA (Typ)
• Fast Propagation Delay: 80ns (Typ)
• Supply Voltage Range: 12V to 20V
• High Output Drive: 1A (Peak, Typ)
• Undervoltage Lockout: 8.8V Start (Typ), 8.2V Stop (Typ)\"

应用 Application

• Current-Mode Switching Power Supplies
• Control of High Current FET Drivers
• Motor Speed and Direction Control