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IRP22N50A

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •UninterruptablePowerS

VishayVishay Siliconix

威世科技威世科技半导体

IRP22N50APBF

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •UninterruptablePowerS

VishayVishay Siliconix

威世科技威世科技半导体

IXFH22N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH22N50P

PolarPowerMOSFETHiPerFET

Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •Swit

IXYS

IXYS Corporation

IXFV22N50P

PolarPowerMOSFETHiPerFET

Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •Swit

IXYS

IXYS Corporation

IXFV22N50PS

PolarPowerMOSFETHiPerFET

Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •Swit

IXYS

IXYS Corporation

IXGH22N50B

HiPerFASTIGBT

VCES=500V IC(25)=44A VCE(sat)typ=2.1V tfi(typ)=55ns Features •InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD •HighfrequencyIGBT •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on

IXYS

IXYS Corporation

IXGH22N50BS

HiPerFASTIGBT

VCES=500V IC(25)=44A VCE(sat)typ=2.1V tfi(typ)=55ns Features •InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD •HighfrequencyIGBT •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on

IXYS

IXYS Corporation

IXTH22N50P

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

N-ChannelEnhancementModeAvalancheRated Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings Highpowerdensity

IXYS

IXYS Corporation

IXTH22N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IRP22N50A

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
CTMICRO
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
CTMICRO
23+
SMD
50000
全新原装正品现货,支持订货
询价
CTMICRO
23+
SMD
50000
全新原装正品现货,支持订货
询价
CTMICRO
21+
SMD
10000
原装现货假一罚十
询价
CTMICRO
23+
SMD
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
CTMRO
24+
NA/
4753
原装现货,当天可交货,原型号开票
询价
CTMICRO
23+
SMD
7000
询价
CTMICRO
24+
SMD
60000
全新原装现货
询价
CTMIRO
1844+
SND
6528
只做原装正品假一赔十为客户做到零风险!!
询价
CTMICRO
25+
1206
880000
明嘉莱只做原装正品现货
询价
更多IRP22N50A供应商 更新时间2025-4-30 15:00:00