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IRP22N50APBF

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •UninterruptablePowerS

VishayVishay Siliconix

威世科技

Vishay

22N50

FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AOK22N50

500V,22AN-ChannelMOSFET

GeneralDescription TheAOK22N50isfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchecapabilitythispartscanbead

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AOK22N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AOK22N50L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AOT22N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AOT22N50

500V,22AN-ChannelMOSFET

GeneralDescription TheAOT22N50&AOTF22N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchcapabili

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AOTF22N50

500V,22AN-ChannelMOSFET

GeneralDescription TheAOT22N50&AOTF22N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchcapabili

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AOTF22N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FDP22N50N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FDP22N50N

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDP22N50N

N-ChannelMOSFET500V,22A,0.22廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

IRFBA22N50

PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=24A)

Applications 1.SwitchModePowerSupply(SMPS) 2.UninterruptiblePowerSupply 3.HighSpeedPowerSwitching Benefits 1.LowGateChargeQgresultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdv/dtRuggedness 3.FullyCharacterizedCapacitan

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRFBA22N50A

PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=24A)

Applications 1.SwitchModePowerSupply(SMPS) 2.UninterruptiblePowerSupply 3.HighSpeedPowerSwitching Benefits 1.LowGateChargeQgresultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdv/dtRuggedness 3.FullyCharacterizedCapacitan

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRFBA22N50APBF

HEXFET짰PowerMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRFP22N50A

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •UninterruptablePowerS

VishayVishay Siliconix

威世科技

Vishay

IRFP22N50A

PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=22A)

Applications SwitchModePowerSupply(SMPS) UninterruptIblePowerSupply HighSpeedPowerSwitching Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRFP22N50A

PowerMOSFET

VishayVishay Siliconix

威世科技

Vishay

IRFP22N50A

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.23Ω(MAX) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IRFP22N50A

PowerMOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世科技

Vishay

详细参数

  • 型号:

    IRP22N50APBF

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Power MOSFET

供应商 型号 品牌 批号 封装 库存 备注 价格
CTMICRO
2021+
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
EVERLIGHT/亿光
22+
LED
8000
专营元器件及配单服务 可开增值税发票 可回收
询价
KYOCERAT-亿光
24+25+/26+27+
车规-LED光电器
36200
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
23+
N/A
85700
正品授权货源可靠
询价
CTMICRO
20
SMD
90000
原装正品,假一赔十
询价
CTMICRO
22+
SMD
80000
原装现货 欢迎咨询
询价
CTMICRO
21+
SMD
50000
终端可免费提供样品,欢迎咨询
询价
CTMICRO
SMD
265209
假一罚十原包原标签常备现货!
询价
CTMICRO
23+
SMD
50000
全新原装正品现货,支持订货
询价
CTMICRO
21+
SMD
10000
原装现货假一罚十
询价
更多IRP22N50APBF供应商 更新时间2024-3-28 15:00:00