丝印：IPAK；Package：TO-251；isc N-Channel MOSFET Transistor

文件：247.76 Kbytes 页数：2 Pages

ISC

无锡固电

AUTOMOTIVE MOSFET

文件：745.76 Kbytes 页数：11 Pages

IRF

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08737 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08719 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Audio Frequency Amplifier High Frequency OSC.

文件：25.27 Kbytes 页数：3 Pages

Fairchild

仙童半导体