IRLR2705TRPBF-TP资料使用说明书批发供应-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IRLR2705TRPBF-TP	文件：2.19253 Mbytes Page：5 Pages	丝印：LR2705；Package：TO-252-3L；N-Channel Enhancement Mode MOSFE Features ® Vos =60Vlo =28A Rosny 文件：2.19253 Mbytes 页数：5 Pages	TECHPUBLIC 台舟电子	TECHPUBLIC
IRLRSLASHU2705	文件：193.8 Kbytes Page：10 Pages	HEXFET POWER MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：193.8 Kbytes 页数：10 Pages	IRF	IRF
IRLRU2705	文件：202.41 Kbytes Page：11 Pages	Logic-Level Gate Drive 文件：202.41 Kbytes 页数：11 Pages	IRF	IRF
IRLU2705	文件：202.22 Kbytes Page：10 Pages	HEXFET POWER MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：202.22 Kbytes 页数：10 Pages	IRF	IRF

更多IRLR2705TRPBF-TP供应商更新时间2025-10-10 15:58:00