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IRLI620GPBF中文资料PDF规格书
IRLI620GPBF规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
• Sink to Lead Creepage Dist. 4.8 mm
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4V and 5 V
• Fast Switching
• Ease of paralleling
• Lead (Pb)-free Available
产品属性
- 型号:
IRLI620GPBF
- 功能描述:
MOSFET N-Chan 200V 4.1 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
3445 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
2022 |
TO-220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
Vishay Siliconix |
22+ |
TO2203 Isolated Tab |
9000 |
原厂渠道,现货配单 |
询价 | ||
VB |
2019 |
TO-220F |
55000 |
绝对原装正品假一罚十! |
询价 | ||
VishayIR |
07+/08+ |
TO-220F |
256 |
询价 | |||
IR |
2020+ |
TO-220F |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IR |
TO-220 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
VISHAY-威世 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
VISHAY |
23+ |
TO220 |
7750 |
全新原装优势 |
询价 | ||
仙童 |
05+ |
TO-262 |
2500 |
原装进口 |
询价 |