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IRL3103LPBF中文资料PDF规格书
IRL3103LPBF规格书详情
Description
Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL3103L) is available for low profile applications.
● Advanced Process Technology
● Surface Mount (IRL3103S)
● Low-profile through-hole (IRL3103L)
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
产品属性
- 型号:
IRL3103LPBF
- 功能描述:
MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-262-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Infineon Technologies |
23+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
IR |
23+ |
TO-262 |
6000 |
原装正品,支持实单 |
询价 | ||
IR |
23+ |
TO-262 |
10950 |
原厂原装正品 |
询价 | ||
IR |
23+ |
NA/ |
11700 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
21+ |
TO-262 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR/International Rectifier/国 |
21+ |
TO-262 |
8483 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
TO-262 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
IR |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
询价 |