RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier’s RAD-HardTM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effe

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IRF

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

Infineon

英飞凌

Power Module for 5 hp Motor Drives

Power Module The IRPT3054A Power Module shown in figure 1 is a chip and wire epoxy encapsulated module. It houses input rectifiers, output inverter, current sense shunts and NTC thermistor. The 3-phase input bridge rectifiers are rated at 1600V. The brake circuit uses 1200V IGBT and freewheeling

文件：227.12 Kbytes 页数：12 Pages

IRF

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications

文件：250.75 Kbytes 页数：2 Pages

ISC

无锡固电

35A 400V Rectifying bridge

文件：282.667 Kbytes 页数：2 Pages

SUNMATE

森美特

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